Dipartimento di Ingegneria
dell'Informazione Università di Parma V.le G. P. Usberti, 181/A
43100 Parma (ITALY) Tel: +39 0521 905832 Fax: +39 0521 905822
E-mail: roberto.menozzi_at_unipr.it
Biography
Roberto Menozzi was born in Genova, Italy, in 1963. He
received the Laurea degree (cum laude) in electronic engineering from the
University of Bologna, Italy, in 1987, and the Ph.D. degree in information
technology from the University of Parma, Italy, in 1994. After serving in the
army, he joined a research group at the Department of Electronics (DEIS),
University of Bologna. Since 1990, he has been with the Department of
Information Technology, University of Parma, where he became Assistant Professor
in 1993, Associate Professor in 1998, and Full Professor in 2006. He spent
research leaves with the Cardiff
University, UK, in summer 1991, the University of Michigan, Ann
Arbor, MI, in fall 1992, and the University of Colorado, Boulder, CO, in
spring 1997. On sabbatical leave for the academic year 2003/04, he spent 9
months working with M/A-COM, Lowell, MA, on
HBT large-signal modeling, power amplifier thermal characterization, and the
development of new thermal resistance extraction techniques. On a six-month
leave from the University of Parma from July to December 2006, he has worked
with the Microelectronic Research
Group, School of Electrical, Electronic
and Computer Engineering, University of
Western Australia, on GaN device characterization and modeling. His
research activity has covered the fields of CMOS latch-up and automated IC
testing and compound semiconductor and heterostructure device characterization,
simulation and reliability evaluation. In recent years he has been mostly
concerned with hot electron issues in heterostructure devices on GaAs and InP
such as HEMTs and HFETs, thermal characterization and modeling of
semiconductor devices and circuits, and the modeling of thin-film solar cells.
On these topics, he has published about 170
journal and conference papers. More specifically, the research interests pursued
are, in a roughly chronological order: Experimental and numerical study of
latch-up in CMOS integrated circuits; Automatic testing of integrated circuits;
Development of a new technique for the extraction of the parasitic resistances
of GaAs MESFETs; High-frequency noise characterization of MESFETs and HEMTs;
Characterization of temperature-accelerated degradation mechanisms of GaAs
heterojunction devices (HEMTs and HBTs); Small-signal model optimization based
on Genetic Algorithms; Numerical simulation and characterization of power p-i-n
diodes for soft-switching in snubber-less applications; Hot electrons, impact
ionization and breakdown in heterojunction FETs (HEMTs and HFETs), and their
reliability implications; Thermal modeling of semiconductor devices and
circuits, and development of new techniques for the extraction of the thermal
resistance and junction temperature of HBTs, LDMOSFETs and PHEMTs. GaN device
characterization and modeling. Thin-film (CIGS and CdTe) solar cell modeling and simulation (in the framework of the H2020 EU project Sharc25). From 2005 to 2008, he was involved in a project funded by the European Union under the EuropeAid ASIA-LINK framework for the development of a EU-ASEAN Credit Transfer System (EACTS). He cooperates as a reviewer with the IEEE
Transactions on Electron Devices, IEEE Electron Device Letters,
IEEE Transactions on Device and Materials Reliability, IEEE Microwave
and Wireless Components Letters, IEEE Transactions on Instrumentation and
Measurements, IEE Electronics Letters, IEE Proceedings on
Circuits, Devices & Systems, Semiconductor Science and
Technology, Microelectronics Reliability, and Solid-State
Electronics, and he has been a committee member for the IEEE Int. Reliability Physics Symp. (IRPS), the
European Symp. on Reliability of Electron
Devices (ESREF), the EIA-JEDEC Reliability of Compound
Semiconductors (ROCS) Workshop, and the Conference on Optoelectronic and
Microelectronic Materials and Devices (COMMAD). From 2007 to 2011, he was a member
of the Editorial Board of Elsevier's Microelectronics
Reliability; in 2012, he was appointed as Associate Editor. He gave invited talks on his research activity at the
University of Central Florida, Orlando, FL (1996), TRW, Redondo
Beach, CA (1997), Jet Propulsion Lab., Pasadena, CA (1997), Fraunhofer
Institut IAF, Freiburg, Germany (2000), Ericsson Lab Italy, Milano,
Italy (2001), M/A-COM, Lowell, MA (2003), BAE Systems, Nashua, NH
(2004), Northrop Grumman Space Technology, Redondo Beach, CA (2004),
Skyworks Solutions Inc., Newbury Park, CA (2004), Raytheon,
Andover, MA (2004), the University of New South Wales, Sydney, NSW
(2006), the University of Western Australia, Perth, WA (2006), IMEP/LETI, Grenoble, France (2007), Royal Melbourne Institute of Technology, Melbourne, Australia (2008), Australian National University, Canberra, Australia (2008), Defence Science and technology Organization, Edinburgh, Australia (2008), University of Adelaide, Adelaide, Australia (2008). R.
Menozzi is a Senior Member of the IEEE.
Dispositivi a semiconduttore (Semiconductor devices) (6 ECTS credits, 1st term, Laurea
Magistrale (MEng) in Ingegneria Elettronica): Electronic and optoelectronic device physics.
Elettronica industriale (Industrial electronics) (6 ECTS credits, 1st term, Laurea
Magistrale (MEng) in Ingegneria Meccanica): AC/DC, DC/DC and DC/AC power converters; basics of closed-loop control systems; sensors; A/D and D/A converters and signal conditioning; digital circuits.
Circuiti e sistemi di potenza (Power circuits and systems) (in English, 6 ECTS credits, 1st term, Laurea
Magistrale (MEng) in Ingegneria Elettronica): Advanced power converters and fundamentals of power systems.
Tesi di Laurea e Laurea Specialistica disponibili
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Roberto Menozzi è Presidente del Corso di Laurea Magistrale in Ingegneria elettronica