Roberto Menozzi’s Publications (as of October 2015)

Journals and Books

[R1] R. Menozzi, L. Selmi, E. Sangiorgi, G. Crisenza, T. Cavioni, and B. Riccò, “Layout dependence of CMOS latchup,” IEEE Transactions on Electron Devices, vol. 35, no. 11, pp. 1892-1901, 1988.

[R2] M. Lanzoni, R. Menozzi, P. Olivo, B. Riccò, and A. Haardt, “Testing of E²PROM aging and endurance: a case study,” European Transactions on Telecommunications, vol. 1, no. 2, pp. 201-208, 1990.

[R3] E. Sangiorgi, C. Fiegna, R. Menozzi, L. Selmi, and B. Riccò, “Latch-up in CMOS circuits: a review,” European Transactions on Telecommunications, vol. 1, no. 3, pp. 337-350, 1990.

[R4] R. Menozzi, M. Lanzoni, C. Fiegna, E. Sangiorgi, and B. Riccò, “Latch-up testing in CMOS IC’s,” IEEE Journal of Solid-State Circuits, vol. 25, no. 4, pp. 1010-1014, 1990.

[R5] M. Lanzoni, R. Menozzi, C. Riva, P. Olivo, and B. Riccò, “Evaluation of E²PROM data retention by field acceleration,” Quality and Reliability Engineering International, vol. 7, pp. 293-297, 1991.

[R6] R. Menozzi, L. Selmi, E. Sangiorgi, and B. Riccò, “Effects of the interaction of neighboring structures on the latch-up behavior of C-MOS IC’s,” IEEE Transactions on Electron Devices, vol. 38, no. 8, pp. 1978-1981, 1991.

[R7] L. Selmi, R. Menozzi, P. Gandolfi, and B. Riccò, “Numerical analysis of the gate voltage dependence of the series resistances and effective channel length in submicrometer GaAs MESFET’s,” IEEE Transactions on Electron Devices, vol. 39, no. 9, pp. 2015-2020, 1992.

[R8] A. Bosacchi, S. Franchi, E. Gombia, R. Mosca, F. Fantini, S. Franchi, and R. Menozzi, “Thermal stability of Al/AlGaAs and Al/GaAs/AlGaAs(MBE) Schottky barriers,” Electronics Letters, vol. 29, no. 8, pp. 651-653, 1993.

[R9] R. Menozzi, P. Cova, and L. Selmi, “Experimental application of a novel technique to extract gate bias dependent source and drain parasitic resistances of GaAs MESFETs,” Solid-State Electronics, vol. 36, no. 7, pp. 1083-1084, 1993.

[R10] I. De Munari, R. Menozzi, and F. Fantini, “Design and simulation of a test pattern for three-dimesional latch-up analysis,” Microelectronics Journal, vol. 24, pp. 759-771, 1993.

[R11] A. Bosacchi, S. Franchi, E. Gombia, R. Mosca, F. Fantini, R. Menozzi, and S. Naccarella, “Electrical properties and thermal stability of MBE-grown Al/Al_xGa_1-xAs/Al_0.25Ga_0.75As Schottky barriers,” Electronics Letters, vol. 30, no. 10, pp. 820-821, 1994.

[R12] R. Menozzi, P. Cova, A. Pisano, F. Fantini, M. Pavesi, and P. Conti, “Band-to-band recombination peak in the ligh emission of commercial pseudomorphic HEMTs,” Alta Frequenza, vol. 7, no. 1, pp. 56-58, 1995.

[R13] R. Menozzi, “Numerical analysis of the extraction of barrier height and Richardson constant of Schottky contacts on AlGaAs/GaAs heterostructures,” Solid-State Electronics, vol. 38, no. 8, pp. 1511-1514, 1995.

[R14] M. Borgarino, R. Menozzi, F. Fantini, M. Schübler, and H. L. Hartnagel, “High base current ideality factors due to trap-assisted band-to-band tunneling in AlGaAs/GaAs HBTs,” Alta Frequenza, vol. 7, no. 5, pp. 76-78, 1995.

[R15] R. Menozzi, P. Cova, C. Canali, and F. Fantini, “Breakdown walkout in pseudomorphic HEMT’s,” IEEE Transactions on Electron Devices, vol. 43, no. 4, pp. 543-546, 1996.

[R16] R. Menozzi and P. Cova, “A physical model of the behavior of GaAs MESFETs in the linear region,” Alta Frequenza, vol. 8, no. 3, pp. 68-70, 1996.

[R17] R. Menozzi, A. Piazzi, and F. Contini, “Small-signal modeling for microwave FET linear circuits based on a genetic algorithm,” IEEE Transactions on Circuits and Systems-I, vol. 43, no. 10, pp. 839-847, 1996.

[R18] R. Menozzi, M. Borgarino, P. Cova, Y. Baeyens, and F. Fantini, “The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTs,” Microelectronics and Reliability, vol. 36, no. 11/12, pp. 1899-1902, 1996.

[R19] R. Menozzi, M. Borgarino, Y. Baeyens, M. Van Hove, and F. Fantini, “On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMT’s,” IEEE Microwave and Guided Wave Letters, vol. 7, no. 1, pp. 3-5, 1997.

[R20] P. Cova, R. Menozzi, F. Fantini, M. Pavesi, and G. Meneghesso, “A study of hot-electron degradation effects in pseudomorphic HEMTs,” Microelectronics and Reliability, vol. 37, no. 7, pp. 1131-1135, 1997.

[R21] M. Van Hove, J. Finders, K. van der Zanden, W. De Raedt, M. Van Rossum, Y. Baeyens, D. Schreurs, and R. Menozzi, “Material and process related limitations of InP HEMT performance,” Materials Science and Engineering, vol. B44, pp. 311-315, 1997.

[R22] P. Cova, R. Menozzi, M. Pavesi, S. Pavesi, M. Manfredi, and F. Fantini, “On the correlation between drain and gate currents and light emission in GaAs PHEMTs biased in the impact ionization regime,” Journal of Physics D: Applied Physics, vol. 31, pp. 276-281, 1998.

[R23] M. Borgarino, R. Menozzi, Y. Baeyens, P. Cova, and F. Fantini, “Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT’s,” IEEE Transactions on Electron Devices, vol. 45, no. 2, pp. 366-372, 1998.

[R24] R. Menozzi, “Hot electron effects and degradation of GaAs and InP HEMTs for microwave and millimeter-wave applications,” Semiconductor Science and Technology, vol. 13, pp. 1053-1063, 1998.

[R25] R. Menozzi, M. Pavesi, M. Manfredi, C. Ghezzi, C. Lanzieri, M. Peroni, and C. Canali, “Hot electron and DX center insensitivity of Al_0.25Ga_0.75As/GaAs HFET’s designed for microwave power applications,” IEEE Transactions on Electron Devices, vol. 45, no. 11, pp. 2261-2267, 1998.

[R26] D. Dieci, C. Canali, R. Menozzi, M. Pavesi, A. Cetronio, “Interactions between DX centers and hot electrons and holes in Al_0.25Ga_0.75As/GaAs heterostructure field-effect transistors,” Applied Physics Letters, vol. 74, no. 8, pp. 1147-1149, 1999.

[R27] R. Menozzi, M. Borgarino, K. van der Zanden, and D. Schreurs, “On the correlation between drain-gate breakdown voltage and hot-electron reliability in InP HEMT’s,” IEEE Electron Device Letters, vol. 20, no. 4, pp. 152-154, 1999.

[R28] K. van der Zanden, D. M. M.-P. Schreurs, R. Menozzi and M. Borgarino, “Reliability testing of InP HEMT’s using electrical stress methods,” IEEE Trans. Electron Devices, vol. 46, no. 8, pp. 1570-1576, 1999.

[R29] D. Dieci, G. Sozzi, R. Menozzi, C. Lanzieri, A. Cetronio and C. Canali, “Degradation of AlGaAs/GaAs power HFETs under on-state and off-state breakdown conditions,” Microelectronics Reliability, vol. 39, pp. 1055-1060, 1999.

[R30] D. Dieci, R. Menozzi, C. Lanzieri, L. Polenta and C. Canali, “Hot electron effects on Al_0.25Ga_0.75As/GaAs power HFET’s under off-state and on-state electrical stress conditions,” IEEE Trans. Electron Devices, vol. 47, no. 2, pp. 261-268, 2000.

[R31] E. Zanoni, G. Meneghesso, R. Menozzi, “Electroluminescence and other diagnostic techniques for the study of hot-electron effects in compound semiconductor devices,” J. Crystal Growth, vol. 210, pp. 331-340, 2000.

[R32] M. Sotoodeh, L. Sozzi, A. Vinay, A. H. Khalid, Z. Hu, A. A. Rezazadeh, and R. Menozzi, “Stepping toward standard methods of small-signal parameter extraction for HBT’s,” IEEE Trans. Electron Devices, vol. 47, no. 6, pp. 1139-1151, 2000.

[R33] M. Busani, R. Menozzi, M. Borgarino, and F. Fantini, “Dynamic thermal characterization and modeling of packaged AlGaAs/GaAs HBT’s,” IEEE Trans. Components and Packaging Technologies, vol. 23, no. 2, pp. 352-359, 2000.

[R34] F. Fantini, M. Borgarino, D. Dieci, R. Menozzi, L. Cattani, “Failure mechanisms in compound semiconductor electron devices,” in H. S. Nalwa (Ed.), Handbook of Advanced Electronic and Photonic Materials and Devices, Vol. 2: Semiconductor Devices, Academic Press, 2001, pp. 155-170.

[R35] M. Borgarino, R. Menozzi, D. Dieci, L. Cattani, F. Fantini, “Reliability physics of compound semiconductor transistors for microwave applications,” Microelectronics Reliability, vol. 41, pp. 21-30, 2001.

[R36] E. Tediosi, M. Borgarino, G. Verzellesi, G. Sozzi, R. Menozzi, “Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs,” Electronics Letters, vol. 37, pp. 719-720, 2001.

[R37] D. Dieci, G. Sozzi, R. Menozzi, E. Tediosi, C. Lanzieri, C. Canali, “Electric-field-related reliability of AlGaAs/GaAs power HFETs: bias dependence and correlation with breakdown,” IEEE Trans. Electron Devices, vol. 48, no. 9, pp. 1929-1937, 2001.

[R38] G. Sozzi, R. Menozzi, “High-electric-field effects and degradation of AlGaAs/GaAs power HFETs: a numerical study,” Microelectronics Reliability, vol. 42, pp. 53-59, 2002.

[R39] M. Borgarino, L. Bary, D. Vescovi, R. Menozzi, A. Monroy, M. Laurens, R. Plana, F. Fantini, J. Graffeuil, “The correlation resistance for low-frequency noise compact modeling of Si/SiGe HBTs,” IEEE Trans. Electron Devices, vol. 49, no. 5, pp. 863-870, 2002.

[R40] A. Mazzanti, G. Verzellesi, G. Sozzi, R. Menozzi, C. Lanzieri, C. Canali, “Physical investigation of trap-related effects in power HFETs and their reliability implications,” IEEE Trans. Device and Materials reliability, vol. 2, no. 3, pp. 65-71, 2002.

[R41] P. Cova, R. Menozzi, M. Dammann, T. Feltgen, W. Jantz, “High-field step-stress and long term stability of PHEMTs with different gate and recess lengths,” Microelectronics Reliability, vol. 42, pp. 1587-1592, 2002.

[R42] P. Cova, R. Menozzi, M. Portesine, “Power p-i-n diodes for snubberless operation: H⁺ irradiation for soft and reliable reverse recovery,” Microelectronics Reliability, vol. 43, pp. 81-87, 2003.

[R43] R. Menozzi, “Off-state breakdown of GaAs PHEMTs: review and new data” (invited paper), IEEE Trans. Device and Materials reliability, vol. 4, pp. 54-62, 2004.

[R44] P. Cova, N. Delmonte, G. Sozzi, R. Menozzi, “Temperature-dependent breakdown and hot carrier stress of PHEMTs,” Microelectronics Reliability, vol. 44, pp. 1381-1385, 2004.

[R45] P. Cova, R. Menozzi, M. Portesine, M. Bianconi, E. Gombia, R. Mosca, “Experimental and numerical study of H+ irradiated p-i-n diodes for snubberless applications,” Solid-State Electronics, vol. 49, pp. 183-191, 2005.

[R46] P. Cova, N. Delmonte, R. Menozzi, “On state breakdown in PHEMTs and its temperature dependence,” Microelectronics Reliability, vol. 45, pp. 1605-1610, 2005.

[R47] R. Menozzi and A. C. Kingswood, “A new technique to measure the thermal resistance of LDMOS transistors,” IEEE Trans. Device and Materials reliability, vol. 5, pp. 515-521, 2005.

[R48] R. Menozzi, J. Barrett, and P. Ersland, “A new method to extract HBT thermal resistance and its temperature and power dependence,” IEEE Trans. Device and Materials reliability, vol. 5, pp. 595-601, 2005.

[R49] P. Cova, R. Menozzi, M. Portesine, “Experimental and numerical study of the recovery softness and overvoltage dependence on p-i-n diode design,” Microelectronics Journal, vol. 37, pp. 409-416, 2006.

[R50] P. Cova, N. Delmonte, R. Menozzi, “Thermal characterization and modeling of power hybrid converters for distributed power systems,” Microelectronics Reliability, vol. 46, pp. 1760-1765, 2006.

[R51] G. Sozzi, R. Menozzi, “A review of the use of electro-thermal simulations for the analysis of heterostructure FETs,” Microelectronics Reliability, vol. 47, pp. 65-73, 2007.

[R52] N. Delmonte, B. E. Watts, G. Chiorboli, P. Cova, R. Menozzi, “Test structures for dielectric spectroscopy of thin films at microwave frequencies,” Microelectronics Reliability, vol. 47, pp. 682-685, 2007.

[R53] M. Kocan, G.A. Umana-Membreno, F. Recht, A. Baharin, N.A. Fichtenbaum, L. McCarthy, S. Keller, R. Menozzi, U.K. Mishra, G. Parish, B.D. Nener, “GaN vertical n-p junctions prepared by Si ion implantation,” Phys. Stat. Sol. (c), vol. 5, pp. 1938-1940, 2008.

[R54] R. Menozzi, G.A. Umana-Membreno, B.D. Nener, G. Parish, G. Sozzi, L. Faraone, U.K. Mishra, “Temperature-dependent characterization of AlGaN/GaN HEMTs: thermal and source/drain resistances,” IEEE Trans. Device and Materials reliability, vol. 8, pp. 255-264, 2008.

[R55] P. Cova, N. Delmonte, R. Menozzi, “Thermal modeling of high-frequency DC/DC switching modules: electromagnetic and thermal simulation of magnetic components,” Microelectronics Reliability, vol. 48, pp. 1468-1472, 2008.

[R56] F. Bertoluzza, N. Delmonte, R. Menozzi, “Three-dimensional finite-element thermal simulation of GaN-based HEMTs,” Microelectronics Reliability, vol. 49, pp. 468-473, 2009.

[R57] M. Bernardoni, P. Cova, N. Delmonte, R. Menozzi, “Heat management for power converters in sealed enclosures: A numerical study,” Microelectronics Reliability, vol. 49, pp. 1293-1298, 2009.

[R58] F. Bertoluzza, G. Sozzi, N. Delmonte, R. Menozzi, “Hybrid large-signal/lumped-element electro-thermal modeling of GaN-HEMTs,” IEEE Trans. Microw. Th. Techn., vol. 57, pp. 3163-3170, 2009.

[R59] M. Bernardoni, N. Delmonte, P. Cova, R. Menozzi, “Thermal modeling of planar transformer for switching power converters,” Microelectronics Reliability, vol. 50, pp. 1778-1782, 2010.

[R60] A. Raffo, S. Di Falco, G. Sozzi, R. Menozzi, D. M.-P. Schreurs, G. Vannini, “Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime,” Microelectronics Reliability, vol. 51, pp. 235-239, 2011.

[R61] D. Mari, M. Bernardoni, G. Sozzi, R. Menozzi, G. A. Umana-Membreno, B. D. Nener, “A physical large-signal model for GaN HEMTs including self-heating and trap-related dispersion,” Microelectronics Reliability, vol. 51, pp. 229-234, 2011.

[R62] P. Tenti, G. Spiazzi, S. Buso, M. Riva, P. Maranesi, F. Belloni, P. Cova, R. Menozzi, N. Delmonte, M. Bernardoni, F. Iannuzzo, G. Busatto, A. Porzio, F. Velardi, A. Lanza, M. Citterio, C. Meroni, “Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity,” Journal of Instrumentation (JINST), vol. 6, P06005, 2011, doi:10.1088/1748-0221/6/06/P06005.

[R63] P. Cova, M. Bernardoni, N. Delmonte, R. Menozzi, “Dynamic electro-thermal modeling for power device assemblies,” Microelectronics Reliability, vol. 51, pp. 1948-1953, 2011.

[R64] M. Alderighi, M. Citterio, M. Riva, S. Latorre, A. Costabeber, A. Paccagnella, F. Sichirollo, G. Spiazzi, M. Stellini, P.Tenti, P. Cova, N. Delmonte, A. Lanza, M. Bernardoni, R. Menozzi, S. Baccaro, F. Iannuzzo, A. Sanseverino, G. Busatto, V. De Luca, F. Velardi, “Power converters for future LHC experiments,” Journal of Instrumentation (JINST), vol. 7, C03012, 2012, doi:10.1088/1748-0221/7/03/C03012.

[R65] F. Giuliani, N. Delmonte, P. Cova, R. Menozzi, “Temperature-dependent reverse-bias stress of normally-off GaN power FETs,” Microelectronics Reliability, vol. 53, pp. 1486-1490, 2013.

[R66] F. Troni, R. Menozzi, E. Colegrove, C. Buurma, “Simulation of Current Transport in Polycrystalline CdTe Solar Cells,” J. Electronic Materials, vol. 42, no. 11, pp. 3175-3180, Nov. 2013, DOI: 10.1007/s11664-013-2702-0.

[R67] G. Sozzi, F. Troni, R. Menozzi, “On the combined effects of window/buffer and buffer/absorber conduction-band offsets, buffer thickness and doping on thin-film solar cell performance,” Solar Energy Materials and Solar Cells, vol. 121, pp. 126-136, Feb. 2014, DOI: 10.1016/j.solmat.2013.10.037.

[R68] R. Menozzi, P. Cova, N. Delmonte, F. Giuliani, G. Sozzi, “Thermal and electro-thermal modeling of components and systems: A review of the research at the University of Parma,” Facta Universitatis. Series Electronics And Energetics, vol. 28, p. 325-344, 2015, ISSN: 0353-3670, doi: 10.2298/FUEE1503325M.

[R69] P. Reinhard, B. Bissig, F. Pianezzi, H. Hagendorfer, G. Sozzi, R. Menozzi, C. Gretener, S. Nishiwaki, S. Buecheler, A. N. Tiwari, “Alkali-templated surface nanopatterning of chalcogenide thin films: A novel approach toward solar cells with enhanced efficiency,” Nano Letters, vol. 15, p. 3334-3340, 2015, ISSN: 1530-6984, doi: 10.1021/acs.nanolett.5b00584.

Conferences

[C1] R. Menozzi, M. Lanzoni, L. Selmi, and B. Riccò, “An improved procedure to test CMOS ICs for latch-up,” Proc. IEEE Int. Test Conf., pp. 1028-1034, 1990.

[C2] R. Menozzi, L. Selmi, E. Sangiorgi, and B. Riccò, “Effects of the interaction of neighboring structures on the latch-up behavior of CMOS ICs,” Proc. European Symp. on Reliability of Electron Dev., Failure Phys. and Analysis (ESREF’90), pp. 175-182, 1990.

[C3] M. Lanzoni, R. Menozzi, C. Riva, P. Olivo, and B. Riccò, “Evaluation of E²PROM data retention by field acceleration,” Proc. 1^st European Symp. on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 90), pp. 329-334, 1990.

[C4] P. Conti, R. Menozzi, and F. Fantini, “Au/Al interaction in commercial HEMTs at 300 °C,” Proc. 15^th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE ’91), 1991.

[C5] P. Pavan, E. Zanoni, R. Menozzi, and L. Selmi, “Adjacent structure interactions in latch-up DC triggeing of CMOS twin-tub and epitaxial technologies,” Proc. 2^nd European Symp. on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 91), pp. 333-338, 1991.

[C6] P. C. Conti, F. Fantini, G. Gallo, R. Menozzi, and E. Pollino, “High temperature storage tests on commercial HEMTs,” Proc. 2^nd European Symp. on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 91), pp. 491-498, 1991.

[C7] R. Menozzi, L. Selmi, P. Gandolfi, and B. Riccò, “Extraction of the series resistances and effective channel length of GaAs MESFETs by means of electrical methods: a numerical study,” IEEE International Electron Devices Meeting (IEDM 91) Tech. Dig., pp. 341-344, 1991.

[C8] S. Franchi, R. Menozzi, F. Fantini, E. Gombia, R. Mosca, S. Franchi, and A. Bosacchi, “The thermal stability of Al Schottky contacts for AlGaAs/GaAs-based HEMTs,” Proc. 16^th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 92), 1992.

[C9] S. Franchi, R. Menozzi, F. Fantini, E. Gombia, R. Mosca, S. Franchi, and A. Bosacchi, “The effect of high-temperature treatments on the barrier height of Al Schottky contacts on AlGaAs/GaAs heterostructures,” 2^nd European Workshop on Heterostructure Technology, Powys, UK, 27-29 Sep. 1992.

[C10] I. De Munari, R. Menozzi, M. Davoli, and F. Fantini, “A test pattern for three-dimensional latch-up analysys,” Proc. IEEE Int. Conf. on Microelectronic Test Structures (ICMTS 93), vol. 6, pp. 103-109, 1993.

[C11] A. Bosacchi, F. Fantini, S. Franchi, E. Gombia, R. Menozzi, R. Mosca, and S. Naccarella, “The thermal stability of MBE-grown Al Schottky contacts on Al_xGa_1-xAs/Al_0.25Ga_0.75As/GaAs heterostructures: impact of the Al_xGa_1-xAs cap composition,” Proc. 17^th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 93), pp. 10-11, 1993.

[C12] M. N. Tutt, R. Menozzi, and D. Pavlidis, “Characterization of MESFET and MODFET microwave noise properties utilizing drain noise current,” 1993 IEEE MTT-S Int. Microwave Symp. Dig., pp. 1099-1102, 1993.

[C13] R. Menozzi, F. Fantini, S. Morgan, A. Bosacchi, S. Franchi, E. Gombia, and R. Mosca, “The thermal stability of MBE-grown Al Schottky contacts on Al_xGa_1-xAs/Al_0.25Ga_0.75As/GaAs heterostructures: impact of the Al_xGa_1-xAs cap composition,” Proc. 4^th European Symp. on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 93), pp. 477-482, 1993.

[C14] P. Cova, E. Chioato, P. Conti, S. Dall’Aglio, F. Fantini, M. Manfredi, R. Menozzi, and R. Necchi, “Light emission spectra of commercial pseudomorphic HEMTs biased in the impact ionization regime,” Proc. European Gallium Arsenide and Related III-V Compounds Applications Symp. (GAAS 94), pp. 177-180, 1994.

[C15] R. Menozzi, P. Cova, S. Dall’Aglio, M. Manfredi, P. Conti, and F. Fantini, “Light emission in commercial pseudomorphic HEMTs,” Proc. European Workshop on Compound Semicond. Dev. and Integrated Circ. (WOCSDICE 94), pp. 30-31, 1994.

[C16] M. Borgarino, R. Menozzi, S. Franchi, F. Fantini, M. Schübler, and H. L. Hartnagel, “A model for anomalous (> 3) base current ideality factors of AlGaAs/GaAs HBTs,” Proceedings IEEE 2^nd Int. Workshop on High Performance Electron Devices for Microwave & Optoelectronic Applications (EDMO’94), pp. 92-97, 1994.

[C17] C. Canali, P. Cova, E. De Bortoli, F. Fantini, G. Meneghesso, R. Menozzi, and E. Zanoni, “Enhancement and degradation of drain current in pseudomorphic AlGaAs/inGaAs HEMT’s induced by hot-electrons,” 1995 IEEE Int.l Reliability Phys. Proc., pp. 205-211, 1995.

[C18] R. Menozzi, M. Bertoldi, F. Fantini, and G. Green, “A physical description of the behavior of GaAs MESFETs in the deep linear region,” Proc. 19^th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 95), 1995.

[C19] P. Cova, R. Menozzi, and F. Fantini, “Hot electron degradation of pseudomorphic HEMTs,” 5^th European Heterostructure Technology Workshop, Cardiff, UK, 1995.

[C20] P. Cova, R. Menozzi, F. Fantini, M. Pavesi, and G. Meneghesso, “A study of hot electron degradation effects in pseudomorphic HEMTs,” Proc. European Symp. on Reliability of Electron Dev., Failure Phys. and Analysis (ESREF 95), pp. 383-387, 1995.

[C21] P. Cova, R. Menozzi, D. Lacey, Y. Baeyens, and F. Fantini, “Hot electron degradation effects in Al_0.25Ga_0.75As/In_0.2Ga_0.8As/GaAs PHEMTs,” Proc. IEEE 3^rd Int. Workshop on High Performance Electron Devices for Microwave & Optoelectronic Applications (EDMO’95), pp. 98-103, 1995.

[C22] G. Meneghesso, E. De Bortoli, P. Cova, and R. Menozzi, “On temperature and hot electron induced degradation in AlGaAs/InGaAs PM-HEMT’s,” Proc. IEEE 3^rd Int. Workshop on High Performance Electron Devices for Microwave & Optoelectronic Applications (EDMO’95), pp. 136-141, 1995.

[C23] M. Borgarino, F. Paorici, R. Menozzi, and F. Fantini, “The effect of low-current stress on Be-doped AlGaAs/GaAs/AlGaAs DHBTs with an undoped spacer between base and emitter,” Proc. 20^th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 96), pp. 8-9, 1996.

[C24] R. Menozzi and A. Piazzi, “On the use of a genetic algorithm for millimeter-wave FET modeling,” Proc. 26^th European Solid State Device Research Conf. (ESSDERC’96), pp. 663-666, 1996.

[C25] R. Menozzi, M. Borgarino, Y. Baeyens, M. Van Hove, and F. Fantini, “Hot electron degradation of the DC and microwave performance of InAlAs/InGaAs/InP HEMTs,” Proc. European Solid State Device Research Conf. (ESSDERC’96), pp. 1009-1012, 1996.

[C26] R. Menozzi, M. Borgarino, P. Cova, Y. Baeyens, M. Pavesi, and F. Fantini, “DC and RF instability of GaAs-based PHEMTs due to hot electrons,” GaAs REL Workshop Proc., pp. 18-21, 1996.

[C27] R. Menozzi, M. Borgarino, P. Cova, Y. Baeyens, M. Van Hove, and F. Fantini, “The effect of hot electron stress on the DC and microwave characteristics of GaAs-PHEMTs and InP-HEMTs,” IEEE Int. Reliability Phys. Proc., pp. 242-247, 1997 (inivited talk).

[C28] R. Menozzi, M. Borgarino, Y. Baeyens, K. van der Zanden, M. Van Hove, and F. Fantini, “The effect of passivation on the hot electron degradation of lattice-matched InAlAs/InGaAs/InP HEMTs,” Proc. 1997 IEEE Int. Conf. on Indium Phosphide and Related Materials, pp. 153-156, 1997.

[C29] F. Fantini, P. Cova, M. Borgarino, L. Cattani, and R. Menozzi, “Reliability and degradation of HEMTs and HBTs,” Proc. 21^st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 97), pp. 11-16, 1997.

[C30] A. Santarelli, G. Vannini, M. Borgarino, R. Menozzi, Y. Baeyens, and K. van der Zanden, “Modelling of low-frequency dispersive effects in GaAs and InP HEMTs,” Proc. 5^th European Gallium Arsenide and Related III-V Compounds Applications Symp. (GAAS 97), pp. 131-134, 1997.

[C31] M. Pasqualetti, M. Portesine, R. Scicolone, B. Zerbinati, R. Menozzi, A. Bellini, and P. Cova, “Effect of the physical structure on the recovery softness of PIN diodes: experimental and numerical analysis,” Proc. 7^th European Conf. on Power Electronics and Applications (EPE’97), pp. 4.013-4.017, 1997.

[C32] M. Borgarino, R. Menozzi, J. Tasselli, A. Marty, and F. Fantini, “A study of the DC and RF degradation of Be-doped AlGaAs/GaAs HBTs under constant current stress,” GaAs REL Workshop Proc., pp. 2-6, 1997.

[C33] R. Menozzi and A. Piazzi, “HEMT and HBT small-signal model optimization using a genetic algorithm,” Proc. IEEE Workshop on High Performance Electron Devices for Microwave & Optoel. Applications (EDMO’97), pp. 13-18, 1997.

[C34] L. Cattani, G. Salviati, M. Borgarino, R. Menozzi, F. Fantini, L. Lazzarini, and C. Zanotti Fregonara, “Cathodoluminescence investigation of stress-induced Berillium outdiffusion in AlGaAs/GaAs HBTs,” Proc. IEEE Workshop on High Performance Electron Devices for Microwave & Optoel. Applications (EDMO’97), pp. 49-54, 1997.

[C35] R. Menozzi, “Reliability issues due to hot electrons in GaAs and InP HEMTs,” 4^th Int. Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC 98), Cardiff, UK, 21-24 June, 1998 (invited talk).

[C36] R. Gaddi, R. Menozzi, D. Dieci, C. Lanzieri, C. Canali, “Hot electron reliability of AlGaAs/GaAs power HFETs,” 8^th European Heterostructure Technology Workshop, Cardiff, 1998.

[C37] C. Lanzieri, R. Menozzi, D. Dieci, M. Peroni, A. Cetronio, C. Canali, “AlGaAs/GaAs HFET power devices for J-band applications: performance dependence on gate recess geometry,” Proc. GAAS 98, Amsterdam, The Netherlands, 5-6 Oct. 1998, pp. 105-110.

[C38] M. Borgarino, R. Menozzi, J. Tasselli, A. Marty, “A comparison between HBT small-signal model optimization using a genetic algorithm and direct parameter extraction,” Proc. GAAS 98, Amsterdam, The Netherlands, 5-6 Oct. 1998, pp. 291-296.

[C39] R. Menozzi, R. Gaddi, F. Nava, C. Lanzieri, and C. Canali, “Reliability of Al/Ti gate AlGaAs/GaAs power HFETs in Hydrogen gas,” GaAs REL Workshop Proc., pp. 75-81, 1998.

[C40] R. Menozzi, M. Borgarino, J. Tasselli, and A. Marty, “HBT small-signal model extraction using a genetic algorithm,” IEEE GaAs IC Symp. Tech. Dig., pp. 157-160, 1998.

[C41] F. Fantini, M. Borgarino, L. Cattani, R. Menozzi, “Reliability of GaAs-based HBTs,” Proc. 6^th IEEE Workshop on High Performance Electron Devices for Microwave & Optoelectronic Applications (EDMO’98), pp. 119-214, 1998.

[C42] F. Fantini, M. Borgarino, L. Cattani, P. Cova, R. Menozzi, G. Salviati, C. Canali, G. Meneghesso, E. Zanoni, “Reliability issues in compound semiconductor heterojunction devices,” Inst. Phys. Conf. Ser. No. 162: Chapter 1, pp. 21-30, 1999.

[C43] R. Gaddi, R. Menozzi, D. Dieci, C. Lanzieri, G. Meneghesso, C. Canali and E. Zanoni, “Bulk and surface effects of Hydrogen treatment on Al/Ti-gate AlGaAs/GaAs power HFETs,” 1999 IEEE Int. Reliability Phys. Proc., pp. 110-115, 1999.

[C44] D. Dieci, P. Cova, R. Menozzi, C. Lanzieri, G. Meneghesso, C. Canali, “Three-terminal off-state breakdown in AlGaAs/GaAs power HFETs: a temperature-dependent analysis of the gate reverse current,” Proc. 23^rd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 99), pp. 47-48, 1999.

[C45] P. Cova, R. Menozzi, M. Pasqualetti, M. Portesine, R. Scicolone, B. Zerbinati, “Anomalous overvoltage oscillations in the reverse recovery of power p-i-n diodes: experiments and simulations,” Proc. 8^th European Conf. on Power Electronics and Applications (EPE’99), 1999.

[C46] P. Cova, R. Menozzi, D. Dieci, C. Canali, M. Pavesi, G. Meneghesso, “Off-state breakdown in GaAs power HFETs,” Proc. 29^th European Solid-State Device Research Conf. (ESSDERC’99), pp. 544-547, 1999.

[C47] G. Sozzi, D. Dieci, R. Menozzi, C. Lanzieri, T. Tomasi and C. Canali, “Experimental and numerical study of the hot electron degradation of power AlGaAs/GaAs HFETs,” Proc. GAAS 99, pp. 139-144, 1999.

[C48] R. Menozzi, D. Dieci, G. Sozzi, T. Tomasi and C. Lanzieri, “The effect of gate and recess scaling on the gate-drain breakdown and hot-electron reliability of AlGaAs/GaAs power HFETs,” Proc. 1999 GaAs Reliability Workshop, pp. 64-70, 1999.

[C49] R. Menozzi, D. Dieci, M. Messori, G. Sozzi, C. Lanzieri and C. Canali, “Bias point dependence of the hot electron degradation of AlGaAs/GaAs power HFETs,” IEEE GaAs IC Symp. Tech. Dig., pp. 171-174, 1999.

[C50] R. Menozzi, “High-field phenomena and reliability issues in microwave heterojunction FETs,” Proc. 1999 IEEE Symp. on High Performance Electron Devices for Microwave & Optoelectronic Applications (EDMO’99), pp. 75-80, 1999 (invited talk).

[C51] D. Dieci, R. Menozzi, T. Tomasi, G. Sozzi, C. Lanzieri, C. Canali, “Comprehensive hot electron assessment of Ku-band AlGaAs/GaAs power HFETs: electrical characterization, accelerated stress, and simulation,” European Space Components Conf. (ESCCON 2000), Noordwijk, The Netherlands, 21-23 Mar. 2000.

[C52] D. Dieci, R. Menozzi, T. Tomasi, G. Sozzi, C. Lanzieri, C. Canali, “Breakdown and degradation issues and the choice of a safe load line for power HFET operation,” 2000 IEEE Int. Reliability Phys. Proc., pp. 258-263, San Jose, CA (USA), 10-13 April 2000.

[C53] R. Menozzi, “Breakdown and high-field reliability issues in heterojunction FETs for microwave power amplification,” Proc. Gallium Arsenide & Other Semiconductors Application Symp. (GAAS), pp. 21-24, Paris (France), 2-3 Oct. 2000 (invited talk).

[C54] R. Menozzi, G. Sozzi, E. Tediosi, D. Dieci, C. Lanzieri, C. Canali, “Looking for an acceleration law for the high-field degradation of AlGaAs/GaAs power HFETs: can MOSFETs help?” Proc. 2000 GaAs Reliability Workshop, pp. 101-116, Seattle, WA (USA), 5 Nov. 2000.

[C55] E. Tediosi, G. Verzellesi, C. Canali, G. Sozzi, R. Menozzi, C. Lanzieri, “Surface-related kink effect in AlGaAs/GaAs power HFETs,” Proc. XXV Workshop on Compound Semicond. Devices and Integrated Circ. Held in Europe (WOCSDICE 2001), pp. 139-140, 2001.

[C56] M. Portesine, F. Fasce, P. Pampili, P. Cova, R. Menozzi, B. Cascone, L. Fratelli, G. Botto, “Optimized diode design for IGBT’s and GCT’s switching circuits,” Proc. 9^th European Conf. on Power Electronics and Applications (EPE’01), Graz, Austria, Sept. 2001.

[C57] R. Menozzi, G. Sozzi, “Numerical investigation of high-field degradation of power HFETs,” Proc. IEEE Topical Workshop on Power Amplifiers for Wireless Communications, San Diego, CA, Sept. 2001.

[C58] M. Borgarino, J. Kuchenbecker, J. G. Tartarin, L. Bary, T. Kovacic, R. Plana, R. Menozzi, F. Fantini, J. Graffeuil, “Investigation of the hot-carrier degradation in Si/SiGe HBT’s by intrinsic low frequency noise source modeling,” Proc. 2001 GaAs Reliability Workshop, Baltimore, MD, pp. 15-20, 21 Oct. 2001.

[C59] R. Menozzi, G. Sozzi, G. Verzellesi, M. Borgarino, C. Lanzieri, C. Canali, “Experimental/numerical investigation of the physical mechanisms behind high-filed degradation of power HFETs and their implications on device design,” Proc. 2001 GaAs Reliability Workshop, Baltimore, MD, pp. 89-95, Oct. 2001.

[C60] R. Menozzi, G. Sozzi, G. Verzellesi, M. Borgarino, C. Canali, C. Lanzieri, “Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs,” 11^th European Heterostructure Technology Workshop (HETECH 2001), Padova, Italy, Oct. 2001, pp. 59-62 (invited talk).

[C61] A. Mazzanti, G. Verzellesi, C. Canali, G. Sozzi, R. Menozzi, “Numerical analysis of hot-electron degradation modes in AlGaAs/GaAs power HFETs,” 13^th Workshop on Physical Simulation of Semiconductor Devices, Ilkley, West Yorks, UK, March 25-26, 2002.

[C62] P. Cova, R. Menozzi, M. Portesine, “H⁺ irradiation for reverse recovery softness and reliability of power p-i-n diodes for snubberless applications,” Proc. 23^rd Int. Conf. Microelectronics, Nis, Yugoslavia, 12-15 May 2002, pp. 143-146.

[C63] A. Mazzanti, G. Verzellesi, A. F. Basile, C. Canali, G. Sozzi, R. Menozzi, “Measurements and simulation of hot-carrier degradation effects in AlGaAs/GaAs HFETs,” Proc. Gallium Arsenide & Related III-V Compounds Application Symp. (GAAS 2002), Milano, 23-24 Sep. 2002, pp. 389-392.

[C64] P. Cova, D. Gallinari, N. Delmonte, R. Alessi, R. Menozzi, “Off-state PHEMT breakdown: a temperature-dependent analysis,” Proc. 2003 GaAs Reliability Workshop, San Diego, CA, pp. 31-56, Nov. 2003.

[C65] R. Menozzi, J. Barrett, P. Ersland, “A new method to measure temperature- and power-dependent thermal resistances of HBTs,” Proc. 2004 Workshop on Reliability Of Compound Semiconductors (ROCS 2004), Monterey, CA, pp. 33-44, Oct. 2004.

[C66] R. Menozzi, J. Barrett, P. Ersland, A. Kingswood, “New methods for easy DC extraction of the thermal resistance microwave bipolar and FET devices,” Proc. 2005 Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2005), Cardiff, UK, pp. 89-91, May 2005, ISBN 0863415164.

[C67] N. Delmonte, B. E. Watts, L. Rosa, G. Chiorboli, P. Cova, R. Menozzi, “Test pattern for microwave dielectric properties of SrBi₂Ta₂O₉,” Proc. 2005 PhD Research in Microelectronics and Electronics Conf., Lausanne, Switzerland, July 2005, ISBN 0780393457.

[C68] P. Cova, G. Sozzi, R. Menozzi, M. Portesine, P. Pampili, P. E. Zani, “A new silicon resistor technology for very high power snubbers,” Proc. 11^th European Conf. on Power Electronics and Applications (EPE’05), Dresden, Germany, 11-14 Sept. 2005, paper N. 0870, ISBN 9075815085.

[C69] P. Cova, N. Delmonte, R. Menozzi, L. Vecchi, “Thermal simulation of hybrid converters for distributed power supplies,” Proc. 4^th Int. Conf. Integrated Power Systems (CIPS 2006), pp. 329-334, Naples, Italy, 7-9 June, 2006, ISBN 9783800729722.

[C70] R. Menozzi, E. De Iaco, G. Sozzi, P. Cova, N. Delmonte, P. Zampardi, K. Kwok, C. Cismaru, A. Metzger, “Electro-thermal simulation of semiconductor devices and hybrid circuits,” 2006 Conf. Optoelectronic and Microelectronic Materials and Devices (COMMAD’06), Perth, WA, Australia, 6-8 Dec. 2006, ISBN 1424405785.

[C71] B. E. Watts, N. Delmonte, R. Menozzi, P. Cova, G. Chiorboli, “Some aspects of the preparation of ferroelectric thin films,” 2006 Conf. Optoelectronic and Microelectronic Materials and Devices (COMMAD’06), Perth, WA, Australia, 6-8 Dec. 2006, paper WO-D3.

[C72] R. Menozzi, G. A. Umana-Membreno, B. D. Nener, G. Parish, G. Sozzi, L. Faraone, U. Mishra, “Measurement of the thermal resistance of AlGaN/GaN HEMTs,” 31^st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2007), pp. 93-96, Venice, Italy, May 20-23, 2007, ISBN 9788861290884.

[C73] R. Menozzi, G. A. Umana-Membreno, B. D. Nener, G. Parish, L. Faraone, U. Mishra, “Measurement of the source and drain resistances of AlGaN/GaN HEMTs and their temperature dependence,” 31^st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2007), pp. 229-232, Venice, Italy, May 20-23, 2007, ISBN 9788861290884.

[C74] K. Ramli, B. Budiardjo, P. D. Purnamasari, A. Ekadiyanto, A. Hunger, E. de Iaco, M. Ismail, R. Menozzi, C. Morandi, A. Muchtar, N. A. Nik Mohammed, G. Passaseo, S. A. Russly, R. F. Sari, H. Shamsuddin, I. Skalbergs, S. Werner, M. N. bin Zainurain, “The EU- ASEAN Credit Transfer System in Engineering Education,” 10^th UICEE Annual Conf. on Engineering Education, pp. 261-264, Bangkok, Thailand, 19-23 March 2007, ISBN 9780732622602.

[C75] N. Mik Mohamed, A. Muchtar, M. Ismail, S. A. Russly, A. Hunger, A. Ekadiyanto, B. Budiardjo, C. Morandi, I. Skalbergs, K. Ramli, P. D. Purnamasari, R. F. Sari, R. Menozzi, “Information package as facilitating tool for student mobility in European-Asian Credit Transfer System (EACTS) student exchange program,” 4^th WSEAS/IASME Int. Conf. on Engineering Education, pp. 81-85, Agios Nikolaos, Crete, Greece, July 24-26, 2007, ISBN 9789608457867.

[C76] M. Ismail, S.A. Russly, A. Muchtar, N. Nik Mohamed, B. Budiardjo, C. Morandi, I. Skalbergs, P. D. Purnamasari, R. Menozzi, “Comparison of Curricular Content for the Electrical, Electronics and Computer Engineering Bachelor Program within European-ASEAN Credit Transfer System (EACTS) Network,” Int. Conf. on Engineering Education and Research (iCEER) 2007, Melbourne, Australia, 2-7 Dec. 2007, ISBN 978-0-9741252-7-X.

[C77] R. Menozzi, “Reliability of GaN-based HEMT devices,” Proc. 2008 Conf. Optoelectronic and Microelectronic Materials and Devices (COMMAD’08), Jul. 28 – Aug. 1, 2008, Sydney, NSW, Australia, pp. 44-50, ISBN 978-1-4244-2717-8.

[C78] F. Alimenti, D. Zito, A. Boni, M. Borgarino, A. Fonte, A. Carboni, S. Leone, M. Pifferi, L. Roselli, B. Neri, R. Menozzi, “System-on-chip microwave radiometer for thermal remote sensing and its application to the forest fire detection,” 15^th IEEE Int. Conf. Electronics, Circuits, and Systems (ICECS 2008), Aug. 31 – Sep. 3, 2008, pp. 1265-1268, ISBN 978-1-4244-2182-4.

[C79] F. Costi, F. Bertoluzza, N. Delmonte, G. Sozzi, R. Menozzi, “Finite-element thermal modeling of GaN- based HEMT structures,” Proc. 2008 Workshop on Reliability Of Compound Semiconductors (ROCS 2008), Monterey, CA, pp. 15-24, Oct. 2008, ISBN 0-7908-0120-5.

[C80] F. Bertoluzza, F. Costi, N. Delmonte, R. Menozzi, G. Sozzi, “Compact thermal modeling of GaN-based structures using SPICE,” 17^th European Heterostructure Technology Workshop (HETECH 2008), Venezia, Italy, Nov. 3-5, 2008, pp. 113-114, ISBN 978-88-6129-296-3.

[C81] F. Bertoluzza, G. Sozzi, N. Delmonte, R. Menozzi, “Lumped element thermal modeling of GaN-based HEMTs,” 2009 IEEE MTT-S Int. Microwave Symp. Dig., pp. 973-976, June 2009, ISBN 978-1-4244-2804-5.

[C82] N. Delmonte, M. Bernardoni, P. Cova, R. Menozzi, “Thermal design of power electronic device and modules,” Proc. COMSOL Conf. 2009, Milano, Italy, Oct. 14-15, 2009, ISBN 978-0-09825697-0-2.

[C83] G. Sozzi, F. Troni, R. Menozzi, “Numerical analysis of the effect of grain size and defects on the performance of CIGS solar cells,” Proc. 2010 Int. Conf. Compound Semiconductor Manufacturing Technology (CS-MANTECH), Portland, OR (USA), May 17-20, 2010, pp. 353-356, ISBN 987-1-893580-15-2.

[C84] D. Mari, M. Bernardoni, G. Sozzi, R. Menozzi, G.A. Umana-Membreno, B. D. Nener, “Compact modeling of GaN HEMTs including temperature- and trap-related dispersive effects,” Proc. 2010 Workshop on Reliability Of Compound Semiconductors (ROCS 2010), Portland, OR, May 17, 2010, pp. 111-123.

[C85] A. Raffo, S. Di Falco, G. Sozzi, R. Menozzi, D. M. M.-P. Schreurs, G. Vannini, “Empirical investigation on device-degradation indicators under nonlinear dynamic regime,” Proc. 2010 Workshop on Reliability Of Compound Semiconductors (ROCS 2010), Portland, OR, May 17, 2010, pp. 201-212.

[C86] M. Bernardoni, N. Delmonte, P. Cova, R. Menozzi, “Self-consistent compact electrical and thermal modeling of power devices including package and heat-sink,” IEEE Proc. Int. Symp. Power Electronics, Electrical drives, Automation and Motion (SPEEDAM 2010), Pisa, Italia, June 14-16, 2010, pp. 556-561.

[C87] F. Troni, F. Dodi, G. Sozzi, R. Menozzi, “Modeling of thin-film Cu(In.Ga)Se₂ solar cells,” Proc. Int. Conf. Simulation of Semiconductor Processes and Devices (SISPAD 2010), Bologna, Italia, Sep. 6-8, 2010, pp. 33-36, ISBN 978-1-4244-7700.

[C88] M. Bernardoni, N. Delmonte, R. Menozzi, “Modeling of the impact of boundary conditions on AlGaN/GaN HEMT self heating,” Proc. 2011 Int. Conf. Compound Semiconductor Manufacturing Technology (CS-MANTECH), Indian Wells, CA (USA), May 16-19, 2011, pp. 229-232, ISBN 987-1-893580-17-6.

[C89] F. Troni, G. Sozzi, R. Menozzi, “A numerical study of the design of ZnMgO window layer for Cadmium-free thin-film CIGS solar cells,” Proc. 7^th Conf. PhD Research in Microelectronics & Electronics (PRIME 2011), Madonna di Campiglio, Italia, July 3-7, 2011, pp. 193-196, ISBN 978-1-4244-9136-0.

[C90] M. Bernardoni, N. Delmonte, G. Sozzi, R. Menozzi, “Large-signal GaN HEMT electro-thermal model with 3D dynamic description of self-heating,” Proc. 41^st European Solid-State Device Research Conf. (ESSDERC 2011), Helsinki, Finland, Sep. 12-16, 2011, pp. 171-174, ISBN 978-1-4577-0708-7.

[C91] M. Bernardoni, N. Delmonte, R. Menozzi, “Lumped-element thermal modeling of SOI FinFETs,” Proc. APMC10/ICONN2012/ACMM22, Perth, Australia, Feb. 5-9, 2012, paper 1096, ISBN 978-1-74052-245-8.

[C92] F. Troni, R. Menozzi, G. Sozzi, J. Sharp, L. Faraone, G. A. Umana-Membreno, J. Dell, “Numerical simulation of grain boundaries in Cadmium Telluride solar cells,” Proc. APMC10/ICONN2012/ACMM22, Perth, Australia, Feb. 5-9, 2012, paper 885, ISBN 978-1-74052-245-8.

[C93] M. Bernardoni, N. Delmonte, R. Menozzi, “Empirical and physical modeling of self-heating in power AlGaN/GaN HEMTs,” Proc. 2012 Int. Conf. Compound Semiconductor Manufacturing Technology (CS-MANTECH), Boston, MA (USA), Apr. 23-26, 2012, pp. 95-98, ISBN 987-1-893580-19-0.

[C94] F. Giuliani, N. Delmonte, P. Cova, R. Menozzi, “Reverse-bias step-stress of normally-off GaN power FETs at different temperatures,” Proc. 2013 Workshop on Reliability Of Compound Semiconductors (ROCS 2013), New Orleans, LA (USA), May 13, 2013, pp. 187-189, ISBN 0-7908-0157-4.

[C95] F. Giuliani, N. Delmonte, P. Cova, R. Menozzi, “GaN HEMTs for power switching applications: from device to system-level electro-thermal modeling,” Proc. 2013 Int. Conf. Compound Semiconductor Manufacturing Technology (CS-MANTECH), New Orleans, LA (USA), May 13-16, 2013, pp. 215-218, ISBN 978-1-893580-21-3.

[C96] G. Sozzi, R. Mosca, M. Calicchio, R. Menozzi, “Anomalous dark current ideality factor (n > 2) in thin-film solar cells: the role of grain-boundary defects,” Proc. IEEE Photovoltaic Specialists Conference (PVSC 2014), Denver, CO (USA), June 8-13, 2014, pp. 1718-1721, ISBN 978-1-4799-4398-2.

[C97] F. Giuliani, D. Barater, C. Concari, P. Cova, N. Delmonte, R. Menozzi, G. Buticchi, L. Tarisciotti, “Modular Photovoltaic Inverter with High-Frequency DC/DC Stage Based on Low-Voltage FETs,” Proc. IEEE Energy Conversion Congress and Exposition (ECCE), Pittsburgh, PA (USA), Sep. 14-18, 2014, pp. 39-46, ISBN 978-1-4799-5776-7.

[C98] G. Sozzi, D. Pignoloni, R. Menozzi, F. Pianezzi, P. Reinhard, B. Bissig, S. Buecheler, A. N. Tiwari, “Designing CIGS solar cells with front-side point contacts,” Proc. IEEE Photovoltaic Specialists Conference (PVSC 2015), New Orleans, LA (USA), June 14-19, 2015, ISBN 978-1-4799-7944-8.

[C99] G. Sozzi, R. Menozzi, N. Cavallari, M. Bronzoni, F. Annoni, M. Calicchio, M. Mazzer, “On the temperature behavior of shunt-leakage currents in Cu(In,Ga)Se₂ solar cells: the role of grain boundaries and rear Schottky contact,” Proc. IEEE Photovoltaic Specialists Conference (PVSC 2015), New Orleans, LA (USA), June 14-19, 2015, ISBN 978-1-4799-7944-8.